gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 1 of 7 silicon carbide schottky diode features package ? high avalanche (uis) capability ? enhanced surge current capability ? superior figure of merit q c /i f ? 3000 v isolation with l ow thermal resistance ? 175 c maximum operating temperature ? temperature independent fast switching ? positive temperature coefficient of v f ? aec-q101 qualifi ed and ppap capable sot-227 (isolated base) advantages applications ? low standby power losses ? improved circuit efficiency (lower overall cost) ? low switching losses ? ease of paralleling without thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? low device capacitance ? low reverse leakage current ? boost diode in power factor correction (pfc) ? switched mode power supply (smps) ? uninterruptible power supply (ups) ? motor drives ? freewheeling / anti-par allel diode in inverters ? solar inverters ? electric vehicles (ev) & dc fast charging ? induction heating & welding absolute maximum ratings (at t c = 25 c unless otherwise stated) parameter symbol conditions values unit repetitive peak reverse voltage (per leg) v rrm 650 v continuous forward current (per leg / per device) i f t c = 25 c, d = 1 104 / 208 a t c = 100 c, d = 1 68 / 136 t c = 128 c, d = 1 50 / 100 non-repetitive peak forward surge current, half sine wave (per leg) i f,sm t c = 25 c, t p = 10 ms 400 a t c = 150 c, t p = 10 ms 320 repetitive peak for ward surge current, half sine wave (per leg) i f,rm t c = 25 c, t p = 10 ms 200 a t c = 150 c, t p = 10 ms 134 non-repetitive peak forward surge current (per leg) i f,max t c = 25 c, t p = 10 s 2000 a i 2 t value (per leg) i 2 dt t c = 25 c, t p = 10 ms 800 a 2 s non-repetitive avalanche energy (per leg) e as l = 0.6 mh, i as = 50 a 725 mj diode ruggedness (per leg) dv/dt v r = 0 ~ 520 v 100 v/ns power dissipation (p er leg / per device) p tot t c = 25 c 263 / 526 w operating an d storage temperature t j , t stg -55 to 175 c * per device v rrm = 650 v i f (tc = 100c) = 136 a * q c = 160 nc * 3 4 2 1
gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 2 of 7 electrical characteristics (per leg) parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 50 a, t j = 25 c 1.5 1.8 v i f = 50 a, t j = 175 c 1.8 2.2 reverse current i r v r = 650 v, t j = 25 c 1 1 0 a v r = 650 v, t j = 175 c 15 150 total capacitive charge q c i f i f,max di f /dt = 200 a/s t j = 175 c v r = 200 v 57 n c v r = 400 v 80 switching time t s v r = 200 v < 10 ns v r = 400 v total capacitance c v r = 1 v, f = 1 mhz 2585 pf v r = 400 v, f = 1 mhz 230 thermal / package characteristics parameter symbol conditions values unit min. typ. max. thermal resistance, junction C case (per leg) r thjc 0 . 5 7 c / w weight w t 2 8 g mounting torque t m screws to heatsink 1.5 nm terminal connection (m4) 1.3 isolation voltage (rms) v iso t = 1 s (50 / 60 hz) 3000 v t = 60 s (50 / 60 hz) 2500 creepage distance on surface d ctt terminal to terminal 10.5 mm d ctb terminal to backside 8.5 striking distance through air d stt terminal to terminal 3.2 mm d stb terminal to backside 6.8
gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 3 of 7 i f = f(v f ,t j ); t p = 250 s i f = f(v f ,t j ); t p = 250 s figure 1: typical forward characteristics (per leg) figure 2: typical high current forward characteristics (per leg) i r = f(v r ,t j ) p tot = f(t c ); t j = 175 c figure 3: typical reverse characteristics (per leg) figure 4: power derating curve (per leg) forard voltage, v f v o c o c o c o c o c forard voltage, v f v o c o c o c o c o c ? ? ? ? reerse voltage, v r v o c o c o c o c o c case teperature, t c o c
gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 4 of 7 i f = f(t c ); d = t p /t; t j = 175 c c = f(v r ); t j = 25 c; f = 1 mhz figure 5: current derating curves (per leg) figure 6: typical junction capacitance vs. reverse voltage characteristics (per leg) q c = f(v r ); t j = 25 c; f = 1 mhz e c = f(v r ); t j = 25 c; f = 1 mhz figure 7: typical capacitive charge vs. reverse voltage characteristics (per leg) figure 8: typical capacitive energy vs. reverse voltage characteristics (per leg) case teperature, t c o c d = . d = . d = . d = . d = . d = reerse voltage, v r v . reerse voltage, v r v reerse voltage, v r v
gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 5 of 7 z th,jc = f(t p ,d); d = t p /t figure 9: transient therm al impedance (per leg) i f = (v f C v bi )/r diff (a) built-in voltage (v bi ): v bi (t j ) = m*t j + n (v), m = -1.26e-03, n = 1.01 differential resistance (r diff ): r diff (t j ) = a*t j 2 + b*t j + c (?); a = 1.72e-07, b = 9.06e-06, c = 0.00968 i f = f(v f , t j ) figure 10: forward curve model (per leg) trasiet theral ipedace, ) th,jc o c/w
gc2x0mps0-22 v sic mps? diode feb 2019 rev1.1 www.genesicsemi.com/schottky_mps/gc2x50mps06-22 7.pdf page 6 of 7 package dimensions sot-227 package outline note 1. controlled dimension is inch. dimension in bracket is millim eter. 2. dimensions do not include end flash, mold flash, material pr otrusions
gc2x0mps0-22 v sic mps? diode copyright ? 2019 genesic semiconductor inc. all rights reserved the information in this document is subject to change without n otice published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 feb 2019 rev1.1 page 7 of 7 rohs compliance the levels of rohs restricted materials in this product are bel ow the maximum concentration values (also referred to as the threshold limits) permitted for such substan ces, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs 2), as adopted by eu member states on january 2, 2013 and amended on march 31, 2015 by eu directive 2015/863. rohs declar ations for this product can be obtained from your genesic representative. reach compliance reach substances of high concern (svhcs) information is availab le for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future, please cont act a genesic representative to insure you get the most up-to-date reach svhc declaration. reach banned substa nce information (reach article 67) is also available upon request. this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the prod uct could lead to death, personal injury or property damage, including but not limited to equipment used in the oper ation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. genesic disclaims all and any warranty and liability arising ou t of use or application of any product. no license, express or implied to any inte llectual property rights is grant ed by this document. related links ? spice models: https://www.gen esicsemi.com/schottky-mps ? evaluation boards: https://www.g enesicsemi.com/technical-suppo rt ? quality manual: https://www.genesicsemi.com/technical-support/ quality-manual ? compliance: https://www.genesics emi.com/technical-support/comp liance ? reliability report: https://www.g enesicsemi.com /technical-supp ort/reliability www.genesicsemi.com/schottky-mps
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